vishay siliconix SIB404DK new product document number: 67099 s11-0236-rev. a, 14-feb-11 www.vishay.com 1 n-channel 12 v (d-s) mosfet product summary v ds (v) r ds(on) ( ? ) i d (a) a q g (typ.) 12 0.019 at v gs = 4.5 v 9 9.6 nc 0.022 at v gs = 2.5 v 9 0.026 at v gs = 1.8 v 9 0.065 at v gs = 1.2 v 3 notes: a. package limited, t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak sc-75 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of t he singulation process in manufactu ring. a solder fillet at the exposed copper tip cannot be guara nteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual sol dering with a soldering iron is not recommended for leadless components. f. maximum under steady stat e conditions is 105 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 12 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) t c = 25 c i d 9 a a t c = 70 c 9 a t a = 25 c 8.9 b, c t a = 70 c 7.1 b, c pulsed drain current i dm 35 continuous source-drain diode current t c = 25 c i s 9 a t a = 25 c 2.1 b, c maximum power dissipation t c = 25 c p d 13 w t c = 70 c 8.4 t a = 25 c 2.5 b, c t a = 70 c 1.6 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 powerpak sc-75-6l-sin g le 6 5 4 1 2 3 d d d d g s s 1.60 mm 1.60 mm markin g code x x x a i x lot tracea b ility and date code part # code orderin g information: SIB404DK-t1-ge3 (lead (p b )-free and halogen-free) n-channel mosfet g d s thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 5 s r thja 41 51 c/w maximum junction-to-case (drain) steady state r thjc 7.5 9.5 features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-75 package - small footprint area - low on-resistance - thin 0.75 mm profile ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? portable devices ? low voltage gate drive load switch
www.vishay.com 2 document number: 67099 s11-0236-rev. a, 14-feb-11 vishay siliconix SIB404DK new product notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 12 v v ds temperature coefficient ? v ds /t j i d = 250 a 12 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.35 0.8 v gate-source leakage i gss v ds = 0 v, v gs = 5 v 100 na zero gate voltage drain current i dss v ds = 12 v, v gs = 0 v 1 a v ds = 12 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds ? 5 v, v gs = 4.5 v 15 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 3 a 0.015 0.019 ? v gs = 2.5 v, i d = 2 a 0.018 0.022 v gs = 1.8 v, i d = 1 a 0.021 0.026 v gs = 1.2 v, i d = 0.5 a 0.035 0.065 forward transconductance a g fs v ds = 10 v, i d = 3 a 30 s dynamic b total gate charge q g v ds = 6 v, v gs = 4.5 v, i d = 9 a 9.6 15 nc gate-source charge q gs 0.9 gate-drain charge q gd 1.7 gate resistance r g f = 1 mhz 0.6 3.2 6.4 ? tu r n - o n d e l ay t i m e t d(on) v dd = 6 v, r l = 0.86 ? i d ? 7 a, v gen = 4.5 v, r g = 1 ? 510 ns rise time t r 20 40 turn-off delaytime t d(off) 20 40 fall time t f 10 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 9 a pulse diode forward current i sm 35 body diode voltage v sd i s = 7 a, v gs = 0 v 0.8 1.2 v body diode reverse recovery time t rr i f = 7 a, di/dt = 100 a/s, t j = 25 c 15 30 ns body diode reverse recovery charge q rr 510 nc reverse recovery fall time t a 8 ns reverse recovery rise time t b 7
document number: 67099 s11-0236-rev. a, 14-feb-11 www.vishay.com 3 vishay siliconix SIB404DK new product typical characteristics (t a = 25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 1.5 v v gs = 5 v thru 2 v v gs = 1 v 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 35 r ds(on) - on-resistance () i d -drain current (a) v gs = 1.8 v v gs = 1.2 v v gs = 2.5 v v gs = 4.5 v 0 1 2 3 4 5 0 2 4 6 8 10 12 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 9.6 v v ds = 6 v v ds = 3 v i d = 9 a transer characteristics capacitance on-resistance s. junction temperature 0 2 4 6 8 10 0.0 0.3 0.6 0.9 1.2 1.5 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 200 400 600 800 1000 1200 0 2 4 6 8 10 12 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) -on-resistance (normalized) t j - junction temperature ( c) v gs = 4.5 v, 2.5 v, 1.8 v; i d = 3 a v gs = 1.2 v, i d = 0.5 a
www.vishay.com 4 document number: 67099 s11-0236-rev. a, 14-feb-11 vishay siliconix SIB404DK new product typical characteristics (t a = 25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 25 c t j = 150 c 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j -temperature ( c) i d = 250 a on-resistance s. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.01 0.02 0.03 0.04 0.05 0.06 012345 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 3 a 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0 safe operating area, junction-to-ambient 0.01 0.1 1 10 100 1000 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 100 ms limited by r ds(on) * 1 ms t single pulse a = 25 c bvdss limited 10 ms 100 s 1 s, 10 s dc
document number: 67099 s11-0236-rev. a, 14-feb-11 www.vishay.com 5 vishay siliconix SIB404DK new product typical characteristics (t a = 25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 5 10 15 20 25 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power derating 0 3 6 9 12 15 25 50 75 100 125 150 t c - case temperat u re (c) r ( w ) e w o p
www.vishay.com 6 document number: 67099 s11-0236-rev. a, 14-feb-11 vishay siliconix SIB404DK new product typical characteristics (t a = 25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67099 . normalized thermal transient im pedance, junction-to-ambient 1 0.1 0.01 normalized effective transient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) duty cycle = 0.5 single pulse 0.1 0.2 0.05 0.02 1. duty cycle, d = 2. per unit base = r thja = 105 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.1 square wave pulse duration (s) normalized ef fective t ransient thermal impedance duty cycle = 0.5 single pulse 0.02 0.1 0.2 0.05
vishay siliconix package information document number: 73000 06-aug-07 www.vishay.com 1 powerpak ? sc75-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 d1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 d2 0.10 0.20 0.30 0.004 0.008 0.012 e 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 e1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 e2 0.20 0.25 0.30 0.008 0.010 0.012 e3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 bsc 0.020 bsc 0.50 bsc 0.020 bsc k 0.180 typ 0.007 typ 0.245 typ 0.010 typ k1 0.275 typ 0.011 typ 0.320 typ 0.013 typ k2 0.200 typ 0.008 typ 0.200 bsc 0.008 typ k3 0.255 typ 0.010 typ k4 0.300 typ 0.012 typ l 0.15 0.25 0.35 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 t 0.03 0.08 0.13 0.001 0.003 0.005 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5935 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting e b e b k1 k2 k 3 k2 k1 k2 k2 pin6 pin5 pin4 d1 d2 d1 d1 pin6 pin5 pin4 pin1 pin2 pin 3 detail z da a1 z z c e e1 e1 e1 k k k k4 l e2 pin2 pin1 pin 3 l e 3
application note 826 vishay siliconix document number: 70488 www.vishay.com revision: 21-jan-08 13 application note recommended pad layout for powerpak ? sc75-6l single 1 1.250 (0.049) 0.250 (0.01) 0.400 (0.016) 0.250 (0.01) 0.300 (0.012) 1.700 (0.067) 1.100 (0.043) 0.300 (0.012) 0.180 (0.007) 0.620 (0.024) 0.300 (0.012) 2.000 (0.079) 0.250 (0.01) 0.545 (0.021) 0.670 (0.026) 2.000 (0.079) dimensions in mm/(inches) 0.200 (0.008) 0.370 (0.015) 0.500 (0.02) return to index
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